Pozícia PhD. v dizajne, výrobe a charakterizácia polovodičov
Spoločnosť: | EURES |
Miesto výkonu práce: | |
Základná zložka mzdy (v hrubom): | |
Dátum nástupu: | |
Dátum pridania ponuky: | 24.04.2025 |
Dátum poslednej aktualizácie: | 25.04.2025 |
Dátum platnosti ponuky: | 00.00.0000 |
Pracovný a mimopracovný pomer: | |
Pracovná oblasť: |
The application deadline is June 30, 2025, at 11.59 PM / 23.59 (CET/CEST)
CIE Research develops advanced power semiconductor components using cutting-edge technologies. We focus on novel WBG devices, including GaN and SiC, designing them for superior efficiency and performance. Our goal is to create next-generation solutions that tackle key challenges in the semiconductor industry.
We are looking for a motivated candidate for a Ph.D. in the “Next-Generation GaN Devices: Advancing Efficiency and Overcoming Industry Challenges”. This research-industrial project focuses on GaN device technologies to address challenges in power electronics, including renewable energy, electric vehicles, and industrial applications. The candidate will prioritize industry requirements in designing these devices. The role involves designing, developing, and characterizing GaN devices in collaboration with our industry partners.
The candidate will have the opportunity to work on several aspects involved in demonstrating high-performance devices: Numerical simulations, device fabrication in the cleanroom (relying on international partners), and device characterization (relying on the facilities in the CIE lab, for static and dynamic measurements and reliability measurements).
Key Responsibilities
- Research & Learning: Develop expertise in GaN device physics and wide-bandgap semiconductor technology.
- Simulation Training: Conduct Silvaco TCAD simulations (fabrication processes, device modeling, and circuit-level simulations) .
- Experimental Work: Participate in cleanroom processes, device fabrication, and electrical measurements (e.g., I-V, C-V, and breakdown tests).
- Reliability Testing: Assist in performing reliability and lifetime tests on fabricated devices.
- International Exchange: Participate in an international research exchange program (3 months to 1 year) at a partner university or research institute to gain new skills and enhance collaboration.